BSD214SN L6327

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Overview of BSD214SN L6327

Part NumberBSD214SN L6327
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 20V 1.5A SOT363-6
DatasheetsDownload BSD214SN L6327 Datasheet PDFPDF Icon
Price for BSD214SN L6327

Specification of BSD214SN L6327

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
46mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.1 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSM
Package / Case
TO-236-3, SC-59, SOT-23-3

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